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SSF6014 Dataheets PDF



Part Number SSF6014
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF6014 DatasheetSSF6014 Datasheet (PDF)

SSF6014 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =60A BV=60V R DS (ON)=14mΩ(max.) DESCRIPTION The SSF6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014 is assembled in high reliability and qualified assembly .

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SSF6014 60V N-Channel MOSFET FEATURES  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =60A BV=60V R DS (ON)=14mΩ(max.) DESCRIPTION The SSF6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014 is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6014 Top View (TO-220) Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range Max. 60 42 240 115 0.74 ±20 235 TBD –55 to +175 Units A W W/ْ C V mJ ْC Thermal Resistance Parameter RθJC Junction-to-case RθJA Junction-to-ambient Min. — — Typ. 1.31 — Max. — 62 Units ْC/W Electrical Characteristics @T J=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source breakdown voltage 60 — — V RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ VGS(th) Gate threshold voltage 2.0 4.0 V gfs Forward transconductance — 60 — S —— 2 IDSS Drain-to-Source leakage current μA — — 10 IGSS Gate-to-Source forward leakage — — 100 nA Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=5V,ID=30A VDS=60V,VGS=0V VDS=60V, VGS=0V,TJ=150ْC VGS=20V www.goodark.com Page 1 of 5 Rev.2.3 Gate-to-Source reverse leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance — — -100 — 45 — —4 — — 15 — — 14.6 — — 14.2 — — 40 — — 7.3 — — 1480 — — 190 — — 135 — nC nS pF SSF6014 60V N-Channel MOSFET VGS=-20V ID=30A VDD=30V VGS=10V VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Continuous Source IS (Body Diode) Pulsed Source ISM (Body Diode) ① Current Current — — — 60 — 240 MOSFET symbol showing the A integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time Qrr Reverse Recovery Charge — 33 — nS — 61 — nC TJ=25ْC,IF=60A di/dt=100A/μs ③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C. EAS test circuit Gate charge test circuit www.goodark.com Page 2 of 5 Rev.2.3 Switch Time Test Circuit SSF6014 60V N-Channel MOSFET Switch Waveforms Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature www.goodark.com Page 3 of 5 Rev.2.3 SSF6014 60V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature www.goodark.com Transient Thermal Impedance Curve Page 4 of 5 Rev.2.3 SSF6014 60V N-Channel MOSFET MECHANICAL DATA TO-220 PACKAGE OUTLINE DIMENSION_GN E A D D1 b ФP ФP1 b1 ϴ1 ϴ2 L D2 ϴ A1 ϴ4 Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 e Dimension In Millimeters Min Nom Max - 1.300 - 2.200 2.400 2.600 - 1.270 - 1.270 1.370 1.470 - 0.500 - - 15.600 - - 28.700 - - 9.150 - 9.900 10.000 10.100 - 10.160 - - 3.600 - 1.500 2.54BSC 12.900 13.100 13.300 - 70 - - 70 - - 30 - - 30 - cE Dimension In Inches Min Nom Max - 0.051 - 0.087 0.094 0.102 - 0.050 - 0.050 0.054 0.058 - 0.020 - - 0.614 - - 1.130 - - 0.360 - 0.390 0.394 0.398 - 0.400 - - 0.142 - 0.059 0.1BSC 0.508 0.516 0.524 - 70 - - 70 - 50 70 90 10 30 50 www.goodark.com Page 5 of 5 Rev.2.3 .


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