Document
SSF6014
60V N-Channel MOSFET
FEATURES Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
ID =60A BV=60V R DS (ON)=14mΩ(max.)
DESCRIPTION The SSF6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014 is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
SSF6014 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage EAS Single pulse avalanche energy ②
EAR Repetitive avalanche energy
TJ TSTG
Operating Junction and Storage Temperature Range
Max. 60 42 240 115 0.74 ±20 235 TBD
–55 to +175
Units
A
W W/ْ C
V mJ
ْC
Thermal Resistance Parameter
RθJC Junction-to-case RθJA Junction-to-ambient
Min. — —
Typ. 1.31 —
Max. — 62
Units ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 — — V
RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ
VGS(th) Gate threshold voltage
2.0 4.0 V
gfs Forward transconductance
— 60 — S
—— 2
IDSS Drain-to-Source leakage current
μA — — 10
IGSS Gate-to-Source forward leakage
— — 100 nA
Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA
VDS=5V,ID=30A VDS=60V,VGS=0V
VDS=60V, VGS=0V,TJ=150ْC
VGS=20V
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Page 1 of 5
Rev.2.3
Gate-to-Source reverse leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance
— — -100 — 45 — —4 — — 15 — — 14.6 — — 14.2 — — 40 — — 7.3 — — 1480 — — 190 — — 135 —
nC nS pF
SSF6014
60V N-Channel MOSFET
VGS=-20V ID=30A VDD=30V VGS=10V
VDD=30V ID=2A ,RL=15Ω
RG=2.5Ω VGS=10V
VGS=0V VDS=25V f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source IS (Body Diode)
Pulsed Source ISM (Body Diode) ①
Current Current
— —
— 60 — 240
MOSFET symbol showing the
A integral reverse
p-n junction diode.
VSD Diode Forward Voltage
— — 1.3 V
TJ=25ْC,IS=40A,VGS=0V ③
trr Reverse Recovery Time Qrr Reverse Recovery Charge
— 33 — nS — 61 — nC
TJ=25ْC,IF=60A di/dt=100A/μs ③
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 30V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
Gate charge test circuit
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Page 2 of 5
Rev.2.3
Switch Time Test Circuit
SSF6014
60V N-Channel MOSFET
Switch Waveforms
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
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Page 3 of 5
Rev.2.3
SSF6014
60V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
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Transient Thermal Impedance Curve Page 4 of 5
Rev.2.3
SSF6014
60V N-Channel MOSFET
MECHANICAL DATA
TO-220 PACKAGE OUTLINE DIMENSION_GN E
A
D
D1 b
ФP ФP1
b1
ϴ1 ϴ2
L
D2 ϴ A1 ϴ4
Symbol
A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4
e
Dimension In Millimeters
Min Nom Max
- 1.300
-
2.200
2.400
2.600
- 1.270
-
1.270
1.370
1.470
- 0.500
-
- 15.600
-
- 28.700
-
- 9.150
-
9.900
10.000
10.100
- 10.160
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 -
- 70 -
- 30 -
- 30 -
cE
Dimension In Inches
Min Nom Max
- 0.051
-
0.087
0.094
0.102
- 0.050
-
0.050
0.054
0.058
- 0.020
-
- 0.614
-
- 1.130
-
- 0.360
-
0.390
0.394
0.398
- 0.400
-
- 0.142
-
0.059
0.1BSC
0.508
0.516
0.524
- 70 -
- 70 -
50 70 90
10 30 50
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Page 5 of 5
Rev.2.3
.