Document
SSF6014A
60V N-Channel MOSFET
FEATURES Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
ID =60A BV=60V R DS (ON)=14mΩ(max.)
DESCRIPTION The SSF6014A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014A is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS EAS EAR TJ TSTG
Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range
SSF6014A Top View (D2PAK)
Max. 60 42 240 115 0.74 ±20 23.