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SSF6N60G Dataheets PDF



Part Number SSF6N60G
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF6N60G DatasheetSSF6N60G Datasheet (PDF)

Main Product Characteristics VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A Features and Benefits TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF6N60G 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve.

  SSF6N60G   SSF6N60G



Document
Main Product Characteristics VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A Features and Benefits TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF6N60G 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Di.


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