2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V ■ Typical ft ...
2SD1047
High power
NPN epitaxial planar bipolar
transistor
Features
■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a
NPN transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology. The resulting
transistor shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary Order code 2SD1047
April 2011
Marking 2SD1047
Package TO-3P
Doc ID 018729 Rev 1
Packaging Tube
1/10
www.st.com
10
Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCBO VCEO VEBO
IC ICM Ptot Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature
Table 3. Symbol Rthj-case
Thermal data Parameter
Thermal resistance junction-case ____max
2SD1047
Value 200 140
6 12 20 100 -65 to 150 150
Unit V V V A A W °C °C
Value 1.25
Unit °C/W
2/10 Doc ID 018729 Rev 1
2SD1047
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current (IE = 0)
VCB = 200 V
0.1 µA
IEBO
Emitter cut-off current (IC = 0)
VEB = 6 V
0.1 µA
V(BR)CEO(1)
C...
