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PC817X9NSZ0F Dataheets PDF



Part Number PC817X9NSZ0F
Manufacturers Sharp
Logo Sharp
Description Photocoupler
Datasheet PC817X9NSZ0F DatasheetPC817X9NSZ0F Datasheet (PDF)

PC817XNNSZ0F Series DIP 4pin Photocoupler PC817XNNSZ0F ■Description PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP. Input-output isolation voltage(rms) is 5kV. Collector-emitter voltage is 80V. ■Agency approvals/Compliance 1. Approved by UL file No. E64380 (as model No. PC817) 2. Approved by CSA file No. CA95323 (as model No. PC817) 3. Package resin : UL flammability grade (94V-0) ■Features 1. 4-pin DIP package 2. Double transfer m.

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PC817XNNSZ0F Series DIP 4pin Photocoupler PC817XNNSZ0F ■Description PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP. Input-output isolation voltage(rms) is 5kV. Collector-emitter voltage is 80V. ■Agency approvals/Compliance 1. Approved by UL file No. E64380 (as model No. PC817) 2. Approved by CSA file No. CA95323 (as model No. PC817) 3. Package resin : UL flammability grade (94V-0) ■Features 1. 4-pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High isolation voltage between input and output (Viso(rms) : 5kV) 4. High collector-emitter voltage(VCEO : 80V) 5. Current transfer ratio (CTR : MIN. 50% at IF=5 mA, VCE=5V) 6. RoHS directive compliant ■Applications 1. Programmable controllers 2. Facsimiles 3. Telephones Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Sheet No.: OP14004EN 1 ■Internal Connection Diagram Anode ① Cathode ② ④ Collector ③ Emitter 1.2 ±0.3 0.6 ±0.2 ■Outline Anode mark ① Rank mark Factory identification mark *2 Date code *1 ④ 2.54 ±0.25 4.58 ±0.50 PC817 SHARP ② 6.5 ±0.5 ③ 7.62 ±0.30 PC817XNNSZ0F 4.58 ±0.50 3.5 ±0.5 0.5TYP. 3.0 ±0.5 Epoxy resin 2.7 ±0.5 0.26±0.10 θθ θ:0~13° 0.5 ±0.1 *1) 2-digit number shall be marked according to OLD DIN standard. *2) Factory identification mark applies to the below. Without : SUN-S Corporation (Japan) : WUXI WONDERFUL ELECTRONICS CO., LTD. (CHINA) or : SUN-S Electronic Technology (KUNSHAN) Co., Ltd (CHINA) Pin material : Copper Alloy Pin finish : SnCu plating (Cu : TYP. 2%) Product mass : Approx. 0.23g UNIT : 1/1 mm Marking is laser marking Name PC817 Outline Dimensions (Business dealing name : PC817X*NSZ0F) Sheet No.: OP14004EN 2 PC817XNNSZ0F ■Absolute maximum ratings Parameter Symbol Rating Ta=25°C Unit *1 Forward current *2 Peak forward current Input Reverse voltage IF IFM VR 50 mA 1A 6V *1 Power dissipation P 70 mW Collector-emitter voltage VCEO 80 V Output Emitter-collector voltage Collector current VECO Ic 6V 50 mA *1 Collector power dissipation Pc 150 mW *1 Total power dissipation Operating temperature Ptot Topr 200 -30 to +100 mW °C Storage temperature Tstg -55 to +125 °C *3 Isolation voltage Viso(rms) 5 kV *4 Soldering temperature Tsol 270 °C *1 The derating factors of absolute maximum ratings due to ambient temperature are shown in Fig. 1 to 4. *2 Pulse width≦100μs, Duty ratio : 0.001 (Refer to Fig. 5) *3 AC for 1 min, 40 to 60%RH *4 For 10 s ■Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Input Reverse current Terminal capacitance Dark current Output Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Transfer Floating capacitance characteristics Cut-off frequency Rise time Fall time Symbol Condition VF IF=20mA VFM IFM=0.5A IR VR=4V Ct V=0, f=1kHz ICEO BVCEO BVECO VCE=50V, IF=0 Ic=0.1mA IF=0 IE=10μA, IF=0 Ic VCE(sat) IF=5mA, VCE=5V IF=20mA Ic=1mA RISO DC500V 40 to 60%RH Cf V=0, f=1MHz fc VCE=5V, Ic=2mA RL=100Ω, -3dB tr VCE=2V Ic=2mA tf RL=100Ω MIN. 80 6 2.5 - 5×1010 - - - TYP. 1.2 30 0.1 1011 0.6 80 4 3 Ta=25°C MAX. Unit 1.4 V 3.0 V 10 μA 250 pF 100 nA -V -V 30 mA 0.2 V -Ω 1.0 pF - kHz 18 μs 18 μs Sheet No.: OP14004EN 3 PC817XNNSZ0F Forward current IF (mA) Collector power dissipation Pc (mW) (Fig. 1) Forward current vs. ambient temperature 50 40 30 20 10 0 -30-25 0 25 5055 75 100 125 Ambient temperature Ta (°C) (Fig. 3) Collector power dissipation vs. ambient temperature 250 200 150 100 50 0 -30 -25 0 25 50 75 100 Ambient temperature Ta (°C) 125 Diode power dissipation P (mW) Total power dissipation Ptot (mW) (Fig. 2) Diode power dissipation vs. ambient temperature 100 80 70 60 40 20 0 -30-25 0 25 50 55 75 100 125 Ambient temperature Ta (°C) (Fig. 4) Total power dissipation vs. ambient temperature 250 200 150 100 50 0 -30-25 0 25 50 75 100 Ambient temperature Ta (°C) 125 Peak forward current IFM (mA) (Fig. 5) Peak forward current vs. duty ratio 2000 1000 500 Pulse width ≦ 100μs Ta = 25°C 200 100 50 20 10 10-3 10-2 10 -1 100 Duty ratio Sheet No.: OP14004EN 4 PC817XNNSZ0F ■Supplements ●Isolation voltage shall be measured in the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The dielectric withstanding tester with zero-cross circuit shall be used. (3) The wave form of applied voltage shall be a sine wave. (It is recommended that the isolation voltage be measured in insulation oil.) ●Business deal.


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