Document
PC817XNNSZ0F Series
DIP 4pin Photocoupler
PC817XNNSZ0F
■Description
PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP. Input-output isolation voltage(rms) is 5kV. Collector-emitter voltage is 80V.
■Agency approvals/Compliance
1. Approved by UL file No. E64380 (as model No. PC817)
2. Approved by CSA file No. CA95323 (as model No. PC817)
3. Package resin : UL flammability grade (94V-0)
■Features
1. 4-pin DIP package 2. Double transfer mold package (Ideal for Flow
Soldering) 3. High isolation voltage between input and output
(Viso(rms) : 5kV) 4. High collector-emitter voltage(VCEO : 80V) 5. Current transfer ratio (CTR : MIN. 50% at IF=5 mA,
VCE=5V) 6. RoHS directive compliant
■Applications
1. Programmable controllers 2. Facsimiles 3. Telephones
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Sheet No.: OP14004EN
1
■Internal Connection Diagram
Anode ① Cathode ②
④ Collector ③ Emitter
1.2 ±0.3 0.6 ±0.2
■Outline
Anode mark ①
Rank mark Factory identification mark *2 Date code *1
④
2.54 ±0.25 4.58 ±0.50
PC817 SHARP
② 6.5 ±0.5 ③
7.62 ±0.30
PC817XNNSZ0F 4.58 ±0.50
3.5 ±0.5 0.5TYP.
3.0 ±0.5
Epoxy resin
2.7 ±0.5
0.26±0.10 θθ
θ:0~13°
0.5 ±0.1
*1) 2-digit number shall be marked according to OLD DIN standard. *2) Factory identification mark applies to the below.
Without : SUN-S Corporation (Japan) : WUXI WONDERFUL ELECTRONICS CO., LTD. (CHINA) or : SUN-S Electronic Technology (KUNSHAN) Co., Ltd (CHINA)
Pin material : Copper Alloy Pin finish : SnCu plating (Cu : TYP. 2%)
Product mass : Approx. 0.23g
UNIT : 1/1 mm
Marking is laser marking
Name PC817 Outline Dimensions (Business dealing name : PC817X*NSZ0F)
Sheet No.: OP14004EN
2
PC817XNNSZ0F
■Absolute maximum ratings
Parameter
Symbol
Rating
Ta=25°C Unit
*1 Forward current
*2 Peak forward current Input
Reverse voltage
IF IFM VR
50 mA 1A 6V
*1 Power dissipation
P
70 mW
Collector-emitter voltage
VCEO
80 V
Output
Emitter-collector voltage Collector current
VECO Ic
6V 50 mA
*1 Collector power dissipation Pc
150 mW
*1 Total power dissipation Operating temperature
Ptot Topr
200 -30 to +100
mW °C
Storage temperature
Tstg
-55 to +125
°C
*3 Isolation voltage
Viso(rms)
5 kV
*4 Soldering temperature
Tsol
270 °C
*1 The derating factors of absolute maximum ratings due to ambient temperature are shown in Fig. 1 to 4. *2 Pulse width≦100μs, Duty ratio : 0.001 (Refer to Fig. 5)
*3 AC for 1 min, 40 to 60%RH *4 For 10 s
■Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Input Reverse current Terminal capacitance Dark current Output Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Transfer Floating capacitance characteristics Cut-off frequency
Rise time Fall time
Symbol
Condition
VF IF=20mA VFM IFM=0.5A
IR VR=4V
Ct V=0, f=1kHz
ICEO BVCEO BVECO
VCE=50V, IF=0 Ic=0.1mA IF=0 IE=10μA, IF=0
Ic VCE(sat)
IF=5mA, VCE=5V IF=20mA Ic=1mA
RISO DC500V 40 to 60%RH
Cf V=0, f=1MHz
fc
VCE=5V, Ic=2mA RL=100Ω, -3dB
tr VCE=2V Ic=2mA tf RL=100Ω
MIN. 80 6 2.5 -
5×1010 -
-
-
TYP. 1.2 30 0.1 1011 0.6
80
4 3
Ta=25°C MAX. Unit
1.4 V 3.0 V 10 μA 250 pF 100 nA -V -V 30 mA 0.2 V -Ω 1.0 pF
- kHz
18 μs 18 μs
Sheet No.: OP14004EN
3
PC817XNNSZ0F
Forward current IF (mA)
Collector power dissipation Pc (mW)
(Fig. 1) Forward current vs. ambient temperature
50
40
30
20
10
0 -30-25
0
25 5055 75 100 125
Ambient temperature Ta (°C)
(Fig. 3) Collector power dissipation vs. ambient temperature
250
200
150
100
50
0 -30 -25
0 25 50 75 100 Ambient temperature Ta (°C)
125
Diode power dissipation P (mW)
Total power dissipation Ptot (mW)
(Fig. 2) Diode power dissipation vs. ambient temperature
100
80
70
60
40
20
0 -30-25 0
25 50 55 75 100 125
Ambient temperature Ta (°C)
(Fig. 4) Total power dissipation vs. ambient temperature
250
200
150
100
50
0 -30-25
0 25 50 75 100 Ambient temperature Ta (°C)
125
Peak forward current IFM (mA)
(Fig. 5) Peak forward current vs. duty ratio
2000 1000 500
Pulse width ≦ 100μs Ta = 25°C
200
100 50
20
10 10-3
10-2
10 -1
100
Duty ratio
Sheet No.: OP14004EN
4
PC817XNNSZ0F
■Supplements
●Isolation voltage shall be measured in the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The dielectric withstanding tester with zero-cross circuit shall be used. (3) The wave form of applied voltage shall be a sine wave. (It is recommended that the isolation voltage be measured in insulation oil.)
●Business deal.