PN4HN60-DBI-T1

PN4HN60 N-Channel Superjunction MOSFET 600V, 4.5A, 0.95Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and PDP TV, Lighting, UPS and industrial power applications. Features ■ RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A ■ Extremely high dv/dt capablity ■ Very high commutation ruggedness ■ Extremely low losses due to very low Rdson*Qg ■ Ultra low gate charge ( Typ. Qg = 15nC) ■ Low effective output capacitance ■ 100% avalanche tested ■ JEDEC qualified, Pb-free plating Applications ■ PC ATX Power ■ Adapter ■ LCD and PDP TV ■ Lighting ■ Server, Telecom, ■ UPS ■ Switching applications Pin Assignments Order codes PN4HN60-DAI-T1 PN4HN60-DBI-T1 Package TO251 TO252 8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn Rev.A.1111 1/7 PN4HN60 Electrical Characteristics Table 1. Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) SYMBOL PARAMETER VDSS ID IDM VGS EAS IAR dv/dt PD TSTG TJ Darin to...