Document
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
PD - 96166
IRLML5203GPbF
VDSS
-30V
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
*
'
6
Micro3TM
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Max. -30 -3.0 -2.4 -24 1.25 0.80 10 ± 20 -55 to + 150
Units V
A
W mW/°C
V °C
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 100
Units °C/W
1
07/22/08
IRLML5203GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. -30 ––– ––– ––– 0.019 ––– ––– ––– 98 ––– ––– 165 -1.0 ––– -2.5 3.1 ––– ––– ––– ––– -1.0 ––– ––– -5.0 ––– ––– -100 ––– ––– 100 ––– 9.5 14 ––– 2.3 3.5 ––– 1.6 2.4 ––– 12 ––– ––– 18 ––– ––– 88 ––– ––– 52 ––– ––– 510 ––– ––– 71 ––– ––– 43 –––
Units V
V/°C mΩ V S µA nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -2.6A VDS = VGS, ID = -250µA VDS = -10V, ID = -3.0A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 70°C VGS = -20V VGS = 20V ID = -3.0A VDS = -24V VGS = -10V VDD = -15V ID = -1.0A RG = 6.0Ω VGS = -10V VGS = 0V VDS = -25V ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min.
––– ––– –––
Typ.
––– 17 12
Max.
-1.3
-24 -1.2 26 18
Units
A
V ns nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
2 www.irf.com
-I D, Drain-to-Source Current (A)
100 10
VGS TOP -15V
-10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V
1
-2.70V
0.1
0.01 0.1
20µs PULSE WIDTH TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
-ID, Drain-to-Source Current (A)
IRLML5203GPbF
100 10
VGS TOP -15V
-10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V
1
-2.70V
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
-ID, Drain-to-Source Current (A)
100
10
TJ = 150° C
1 0.1
2.0
TJ = 25° C
V DS= -15V 20µs PULSE WIDTH
3.0 4.0 5.0 6.0
-VGS , Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 3.0A 1.5
1.0
0.5
0.0 VGS = -10V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
C, Capacitance (pF)
IRLML5203GPbF
800
VCCCGirossssSss
= = = =
0V, CCCggdsds
+ +
f = 1MHz Cgd , Cds Cgd
SHORTED
600
Ciss
400
200 0 1
Coss Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
-VGS , Gate-to-Source Voltage (V)
20 ID = -3.0A 16
VVDDSS
= =
-24V -15V
12
8
4
0 0 4 8 12 16
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
-ISD , Reverse Drain Current (A)
100
10 TJ = 150° C
1 TJ = 25° C
0.