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2N3767 Dataheets PDF



Part Number 2N3767
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistors
Datasheet 2N3767 Datasheet2N3767 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 4A IB Base Curre.

  2N3767   2N3767



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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 4A IB Base Current-Continuous 2A PC Collector Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 8.75 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETE.


2N3766 2N3767 2N3773L


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