Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation-
: PC= 20W @TC= 25℃
APPLICATIONS ·Designed for power amplifier and medium speed
applications.
switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
4A
IB Base Current-Continuous
2A
PC Collector Power Dissipation@TC=25℃ 20
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 8.75
UNIT ℃/W
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3767
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETE.