(PDF) 2N3904 Datasheet PDF | Inchange Semiconductor





2N3904 Datasheet PDF

Part Number 2N3904
Description Silicon NPN Power Transistors
Manufacture Inchange Semiconductor
Total Page 2 Pages
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Features: Datasheet pdf INCHANGE Semiconductor isc Silicon NPN P ower Transistor isc Product Specificat ion 2N3904 DESCRIPTION ·Low Saturatio n Voltage- : VCE(sat)= 200mV(Max)@ IC = 10mA ·Complement to Type 2N3906. APPLI CATIONS ·Designed for high-speed switc hing and Amplifier applications. ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Cu rrent-Continuous ICP Collector Current -Peak IBM Peak base current PC Collec tor Power Dissipation @TC=25℃ TJ Jun ction Temperature Tstg Storage Tempera ture THERMAL CHARACTERISTICS SYMBOL P ARAMETER Rth j-a thermal resistance f rom junction to ambient VALUE 60 40 6 200 300 100 625 150 -55~150 UNIT V V V mA mA mA mW ℃ ℃ MAX 250 UNIT K/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCH ANGE Semiconductor isc Silicon NPN Powe r Transistor isc Product Specification 2N3904 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise s.

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2N3904 datasheet
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3904
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)= 200mV(Max)@ IC =10mA
·Complement to Type 2N3906.
APPLICATIONS
·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Peak
IBM Peak base current
PC Collector Power Dissipation @TC=25
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
60
40
6
200
300
100
625
150
-55~150
UNIT
V
V
V
mA
mA
mA
mW
MAX
250
UNIT
K/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

2N3904 datasheet
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3904
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=10μA, IE=0
V(BR)CEO Collector-emitter breakdown voltage IC= 1mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE= 10μA, IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat) base-emitter saturation voltage
IC= 50mA; IB=5mA
ICBO collector cut-off current
I
CEO
collector cut-off current
IEBO Emitter Cutoff Current
VCB =60 V,IE = 0
VCE= 40V, IB=0
VEB=5V; IC=0
hFE-1
DC Current Gain
IC= 10 mA ; VCE= 1V
hFE-2
DC Current Gain
IC= 50 mA ; VCE= 1V
hFE-3
DC Current Gain
IC= 100 mA ; VCE= 1V
MIN MAX UNIT
60 V
40 V
6V
0.3 V
0.95 V
0.1 uA
0.1 uA
0.1 uA
100 400
60
30
Classification of hFE1
Rank
Range
O
100-200
Y
200-300
G
300-400
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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