2N5935

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5935 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay driver service. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon ...