2SA1259

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=125℃ Tj Junction Temperature -8 A 30 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1259 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A ,IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A ,IB= -5mA ICBO Collector Cutoff Current VCB= -40V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2.5A ; VCE= -2V 2SA1259 MIN TYP. MAX UNIT -70 V -60 V -1.0 -1.5 V 2.0 V -0.1 mA...