2SA818

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1628 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -50 mA 1W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vo...