2SB1144

isc Silicon PNP Power Transistor DESCRIPTION ··Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SD1684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1144 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1144 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V MIN TYP. MAX UNIT -100 V -120 V...