2SB1100

isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -25mA ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10A ; VCE= -2V  hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 2SB1100 MIN TYP. MAX UNIT -1.5 V -2.0 V -10 μA -3 mA 1000 30000 NOTICE： I...