2N6050

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature 150 -65~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Pow...