isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage
: VCE(...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A ·Complement to Type 2SD1586 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.8
A
2 W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1095
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
2SB1095
MIN TYP. MAX UNIT
-1.5
V
-2.0
V
-10 μA
-10 μA
20
40
200
20
MHz
NOTICE: ISC r...