INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2N6057
DESCRIPTION ·Bu...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Darlingtion Power
Transistor
2N6057
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min) ·Complement to type 2N6050
APPLICATIONS ·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
12 A
ICM Collector Current-Peak
20 A
IB Base Current
0.2 A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.17
UNIT ℃/W
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