isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6211
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2N6211
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -225V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching and linear amplifier
application for high-voltage operational amplifier, switching
regulators, converters, inverters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO VCEO VEBO
IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
-275 -225
-6 -2
ICM
Collector Current-Peak
-5
IB
Collector Current-Continuous
-1
PC
Collector Power Dissipation @ TC=25℃
35
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 5.0 ℃/W
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
2N6211
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-225
V
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA
-1.4
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -125mA
-1.4
V
ICEV
...