2N6421

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6421 DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -375 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscs...