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GS8182S18BD

GSI Technology

18Mb Burst of 2 SigmaSIO DDR-II SRAM

GS8182S08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb Burst of 2 SigmaSIO...


GSI Technology

GS8182S18BD

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GS8182S08/09/18/36BD-400/375/333/300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 18Mb Burst of 2 SigmaSIO DDR-IITM SRAM 400 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features Simultaneous Read and Write SigmaSIO™ Interface JEDEC-standard pinout and package Dual Double Data Rate interface Byte Write controls sampled at data-in time DLL circuitry for wide output data valid window and future frequency scaling Burst of 2 Read and Write 1.8 V +100/–100 mV core power supply 1.5 V or 1.8 V HSTL Interface Pipelined read operation Fully coherent read and write pipelines ZQ mode pin for programmable output drive strength IEEE 1149.1 JTAG-compliant Boundary Scan Pin-compatible with present 9Mb, 36Mb, and 72Mb and future 144Mb devices 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package RoHS-compliant 165-bump BGA package available SigmaSIO DDR-II™ Family Overview GS8182S08/09/18/36BD are built in compliance with ...




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