Document
GS832118/32/36E-xxxV
Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available
Functional Description
Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
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