GS8321E18E-V

GS8321E18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features FT pin for user-configurable flow through or pipeline operation Dual Cycle Deselect (DCD) operation IEEE 1149.1 JTAG-compatible Boundary Scan 1.8 V or 2.5 V core power supply 1.8 V or 2.5 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Default to Interleaved Pipeline mode Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 165-bump FP-BGA package RoHS-compliant 165-bump BGA package available Functional Description Applications The GS8321E18/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Leve...