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GS8342T08BD

GSI Technology

36Mb SigmaDDR-II Burst of 2 SRAM

GS8342T08/09/18/36BD-400/350/333/300/250 165-Bump BGA Commercial Temp Industrial Temp 36Mb SigmaDDR-IITM Burst of 2 SR...


GSI Technology

GS8342T08BD

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Description
GS8342T08/09/18/36BD-400/350/333/300/250 165-Bump BGA Commercial Temp Industrial Temp 36Mb SigmaDDR-IITM Burst of 2 SRAM 400 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features Simultaneous Read and Write SigmaDDR™ Interface Common I/O bus JEDEC-standard pinout and package Double Data Rate interface Byte Write (x36, x18 and x9) and Nybble Write (x8) function Burst of 2 Read and Write 1.8 V +100/–100 mV core power supply 1.5 V or 1.8 V HSTL Interface Pipelined read operation with self-timed Late Write Fully coherent read and write pipelines ZQ pin for programmable output drive strength IEEE 1149.1 JTAG-compliant Boundary Scan Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb devices 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package RoHS-compliant 165-bump BGA package available SigmaDDR™ Family Overview The GS8342T08/09/18/36BD are built in compliance with the SigmaDDR-II SRAM pinout standard for Common I/O sync...




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