AUIRG4PH50S

AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C Features Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency Industry standard TO-247AC package Lead-Free Automotive Qualified * G E n-channel AUIRG4PH50S VCES = 1200V IC = 81A@ TC = 100°C VCE(on) typ. = 1.47V@ 33A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions G Gate TO-247AC C Collector E Emitter Base part number AUIRG4PH50S Package Type TO-247AC Standard Pack Form Quantity Tube 25 Complete Part Number AUIRG4PH50S Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Thermal Resistance RθJC (IGBT) RθCS RθJA Collector-to-Emitter Voltage Parameter Continuous Collector Current Continuous Collector Current d Pulse...