3.0V single power flash memory
S29GL512N S29GL256N S29GL128N
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
This product family has bee...
Description
S29GL512N S29GL256N S29GL128N
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S, and S29GL512T supersede the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended migration paths. Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information.
Not Recommended for New Design
Distinctive Characteristics
Architectural Advantages
Single Power Supply Operation – 3 volt read, erase, and program operations
Enhanced VersatileI/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
Manufactured on 110 nm MirrorBit Process Technology Secured Silicon Sector Region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial N...
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