Power Transistor. 2N6545 Datasheet

2N6545 Transistor. Datasheet pdf. Equivalent


Part 2N6545
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Spee.
Manufacture Inchange Semiconductor
Datasheet
Download 2N6545 Datasheet


isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Saf 2N6545 Datasheet
2N6545 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6545 Datasheet
2N6544 2N6545 NPN SILICON POWER TRANSISTOR w w w. c e n t r 2N6545 Datasheet
Recommendation Recommendation Datasheet 2N6545 Datasheet




2N6545
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
850
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25125
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
/W
2N6545
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2N6545
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.0A
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
ICBO
Collector Base Cutoff Current
VCB=850V; IE= 0
hFE-1
DC Current Gain
IC= 2.5A; VCE= 3V
hFE-2
DC Current Gain
IC= 5A; VCE= 3V
fT
Current Gain-Bandwidth Product
IC= 0.3A ; VCE= 10V; ftest=1.0MHz
Switching times-Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 5A , VCC= 250V,
IB1= -IB2= 1A, tp= 0.1ms
Duty Cycle2.0%
2N6545
MIN MAX UNIT
400
V
1.5
V
5.0
V
1.6
V
1.0 mA
0.5 mA
12
60
7
35
6.0
MHz
0.05 μs
1.0 μs
4.0 μs
1.0 μs
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark







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