DatasheetsPDF.com

2N6574 Dataheets PDF



Part Number 2N6574
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2N6574 Datasheet2N6574 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Colle.

  2N6574   2N6574


Document
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2N6574 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 7A; VCE=3V IEBO Emitter Cutoff Current VEB= 8V; IC= 0 ICBO Collector Base Cutoff Current VCB=600V; IE= 0 hFE-1 DC Current Gain IC=3A; VCE=3V hFE-2 DC Current Gain IC= 7A; VCE= 3V fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V Switching times Ton On Time toff Off Time IC= 7A; IB=1.4A, 2N6574 MIN MAX UNIT 1 V 1.4 V 0.1 mA 0.1 mA 20 60 7 21 5 MHz 1 μs 3.2 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


2N6545 2N6574 2N6580


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)