2SA1069-Z

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -12 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1069-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -3.0A ; IB1=-IB2= -0.3A, VBE(OFF)=5.0V, L=180μH,clamped IC= -6.0A ; IB1= -0.6A; IB2= -0.3A, VBE(OFF)= 5.0V, L= 180μH,clamped VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A ...