2SA1225

isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1225 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA,IC=0 V (BR)CEONOTE Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=-1mA ,IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter Voltage VCE=-5V, IC=-0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -0.1A; VCE= -5V fT Transition frequency VCE=-10V ,IC=-100mA Cob Collector output capacitance NOTE:Pulse test VCB=-10V ,IE=0,f=1MHz MIN -5 -160 -160 70 TYP 100 30 MAX UNI T V V V -1.5 V -1.0 V -0.1 μA -0.1 μA 2...