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2SA1261-Z Dataheets PDF



Part Number 2SA1261-Z
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet 2SA1261-Z Datasheet2SA1261-Z Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Vo.

  2SA1261-Z   2SA1261-Z



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isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1261-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A; IB= -0.5A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped VCE(sat)* Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(sat)* Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -100V; RBE= 51Ω,Ta=125℃ VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V, Ta=125℃ VEB= -5V; IC= 0 hFE-1* DC Current Gain IC= -0.5A; VCE= -5V hFE-2* DC Current Gain IC= -3.0A; VCE= -5V hFE-3* DC Current Gain IC= -5.0A; VCE= -5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time *:PW≤350us,duty cycle≤2% IC= -5.0A, RL= 10Ω, IB1= -IB2= -0.5A, VCC≈-50V  hFE-2 Classifications M L K 40-80 60-120 100-200 MIN MAX UNIT -100 V -100 V -100 V -0.6 V -1.5 V -10 μA -1.0 mA -10 μA -1.0 mA -10 μA 40 200 40 200 20 0.5 μs 1.5 μs 0.5 μs isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1261-Z NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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