Document
isc Silicon PNP Power Transistor
2SA1261-Z
DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC3157
APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.5
A
20
W
150
℃
Tstg
Storage Temperature Range -55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA1261-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A; IB= -0.5A, L=1mH
VCEX(SUS)-1 VCEX(SUS)-2
Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped
IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped
VCE(sat)* Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(sat)* Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -100V; RBE= 51Ω,Ta=125℃
VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V, Ta=125℃
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2*
DC Current Gain
IC= -3.0A; VCE= -5V
hFE-3*
DC Current Gain
IC= -5.0A; VCE= -5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
*:PW≤350us,duty cycle≤2%
IC= -5.0A, RL= 10Ω, IB1= -IB2= -0.5A, VCC≈-50V
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
MIN MAX UNIT
-100
V
-100
V
-100
V
-0.6
V
-1.5
V
-10
μA
-1.0
mA
-10
μA
-1.0
mA
-10
μA
40
200
40
200
20
0.5
μs
1.5
μs
0.5
μs
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA1261-Z
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.com
3 isc & iscsemi is registered trademark
.