2SA1645-Z

isc Silicon PNP Power Transistor 2SA1645-Z DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Peak -14 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -3.5 A 1.5 W 35 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1645-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A VBE(sat)-2NOTE Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A ICBO Collector Cutoff Current VCB= -100V; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=...