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2SA1649-Z Dataheets PDF



Part Number 2SA1649-Z
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet 2SA1649-Z Datasheet2SA1649-Z Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power.

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isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature -20 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -200mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -300mA VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= -3A; IB= -200mA VBE(sat)-2NOTE Base-Emitter Saturation Voltage IC= -4A; IB= -300mA ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1NOTE DC Current Gain IC= -0.5A; VCE= -2V hFE-2NOTE DC Current Gain IC= -2A; VCE= -2V hFE-3NOTE DC Current Gain IC= -4A; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse IC= -500mA; VCE= -10V  hFE-1 Classifications M L K 100-200 150-300 200-400 2SA1649-Z MIN TYP. MAX UNIT -0.3 V -0.5 V -1.2 V -1.5 V -10 μA -10 μA 100 100 400 60 250 pF 120 MHz isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1649-Z NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of an.


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