Document
isc Silicon PNP Power Transistor
2SA1649-Z
DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃ NOTE2
TJ
Junction Temperature
-20
A
15 W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -200mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -300mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= -3A; IB= -200mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= -4A; IB= -300mA
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2NOTE
DC Current Gain
IC= -2A; VCE= -2V
hFE-3NOTE
DC Current Gain
IC= -4A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= -500mA; VCE= -10V
hFE-1 Classifications
M
L
K
100-200 150-300 200-400
2SA1649-Z
MIN TYP. MAX UNIT
-0.3 V
-0.5 V
-1.2 V
-1.5 V
-10 μA
-10 μA
100
100
400
60
250
pF
120
MHz
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SA1649-Z
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of an.