isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1770
DESCRIPTION ·High breakdown voltage and large current ...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1770
DESCRIPTION ·High breakdown voltage and large current capacity ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC4614
APPLICATIONS ·High voltage switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -1.5 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ Junction Temperature
-2.5 A
15 W
1.0
150 ℃
Tstg Storage Temperature Range
-55~150
℃
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isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1770
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAM...
