2SA2040

isc Silicon PNP Power Transistor 2SA2040 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -11 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2040 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3.5A; IB= -175mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2.0A; IB= -40mA VBE(sat) Base-Emitter Saturation Voltage IC= -2.0A; IB= -40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MH...