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NJVMJD6039T4G

ON Semiconductor

Darlington Power Transistors

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose p...


ON Semiconductor

NJVMJD6039T4G

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Description
MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features  Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  Straight Lead Version in Plastic Sleeves (“−1” Suffix)  Monolithic Construction With Built−in Base−Emitter Shunt Resistors  High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc  Epoxy Meets UL 94 V−0 @ 0.125 in  ESD Ratings:  Human Body Model, 3B > 8000 V  Machine Model, C > 400 V  NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable  Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Continuous Peak VCE...




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