DatasheetsPDF.com
NJD2873
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier app...
Inchange Semiconductor
Download NJD2873 Datasheet
Similar Datasheet
NJD2873
Silicon NPN Power Transistor
- Inchange Semiconductor
NJD2873
Power Transistors
- ON Semiconductor
NJD2873T4
Power Transistor
- ON Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
