CJ201NL

CJ201NL SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT–23 FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific Applications APPLICATIONS z Power Management z Peripheral Driver MARKING: 201N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5V IC Collector Current 1A PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 Emitte...