CJ2101-G

MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P-Channel MOSFET - Leading trench technology for low RDS(on) extending battery life Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.008 grams(approx.). Comchip SMD Diode Specialist SOT-323 0.053(1.35) 0.045(1.15) 0.043(1.10) 0.035(0.90) 0.087(2.20) 0.079(2.00) D GS 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.096(2.45) 0.085(2.15) 0.016(0.40) 0.008(0.20) 0.004(0.10) 0.000(0.00) 0.017(0.425)REF. Dimensions in inches and (millimeter) Circuit diagram - 1. GATE - 2. SOURCE - 3. DRAIN 3 D 1 G Maximum Ratings (at Ta=25 °C unless otherwise noted) Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (tp=10µs) Power dissipation Thermal resistance from junction to ambient Junction temperature range Storage temperature range VDS VGS ID ...