CJ3401

CJ3401 Feature  -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged  SOT-23 for Surface Mount Package P-Channel Enhancement Mode MOSFET Applications SOT-23 ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous TA=25℃ Unless Otherwise noted Symbol VDS VGS ID Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage TA=25℃ Unless Otherwise noted Symbol Test Conditions BVDSS VGS=0V, ID=-250μA Zero-Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V On Characteristics Gate Threshold Voltage VGS(th) VGS= VDS, ID=-250µA Static Drain-source On-Resistance RD...