CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High d...
CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect
Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
G
D S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature
Symbol
VDS VGS ID PD RθJA TJ TSTG
Value
-30 ±12 -4.2 400 313 150 -55~+150
Unit
V V A
mW ℃/W
℃ ℃
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1 of 3
CJ3401A
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current
V(BR)DSS IDSS IGSS
VGS = 0V, ID =-250µA VDS =-24V,VGS = 0V VGS =±12V, VDS = 0V
On characteristics
Drain-s...
