CJ3404
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION The CJ...
CJ3404
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect
Transistor
DESCRIPTION The CJ3404 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance.
SOT-23
1. GATE 2. SOURCE 3. DRAIN
MARKING: R4
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current (t ≤10s)
ID
Pulsed drain current *
IDM
Thermal resistance from junction to ambient
RθJA
Junction temperature
TJ
Storage temperature
Tstg
* Repetitive rating : Pulse width limited by maximum junction temperature.
Value
30 ±20 5.8 30 357 150 -55~ 150
Unit
V V A A
℃/W ℃ ℃
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CJ3404
Electrical characteristics (Ta=25℃ unless otherwise not...
