CJ818B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ818B TRANSISTOR (PNP) DESCRIPTIONS The device is manfactured in low voltage PNP Planar Technology with “Base Island ” layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. FEATURE Very low collector to emitter saturation voltage APPLICATIONS z Power management in portable equipments z Switching regulator in battery charge applications MARKING: 6  SOT-23-6L 1    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation RθJA Thermal Resistance from Junction to Ambient Ptot Total Dissipation at TC = 25℃ RθJC Thermal Resistance from Junction to case (note 1) TJ Junction Temperature Tstg Storage Temperature Note 1：Package mounted on FR4 pcb 25mm x 25mm. Va...