HG Semiconductors
MRF476HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG MRF476...
HG Semiconductors
MRF476HG RF POWER
TRANSISTOR
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
DESCRIPTION:
The HG MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz.
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
IC 1.0 A
VCE 18 V
VCB 36 V
PDISS
10 W @ TC = 25 °C
TSTG
-65 °C to +150 °C
JC 17.5 °C/W
1 = BASE
2 = COLLECTOR
3 = EMITTER TAB = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 10 mA
BVCES
IC = 25 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
IC = 250 mA
MINIMUM TYPICAL MAXIMUM
18 36 4.0
0.5 10 50
UNITS
V V V mA ---
Cob VCB = 12.5 V
f = 1.0 MHz
25 35 pF
GPE IMD
VCC = 12.5 V f1 = 30 MHz
ICQ = 20 mA Pout = 3.0 W (PEP) f2 = 30.001 MHz
15 40
18 -35
-30
dB % dB
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
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