CJ2302S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2U SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature Symbol VDS VGS ID IDM IS PD RθJA TJ TSTG Value 20 ±8 2.1 10 0.6 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ A,Jul,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-resistancea Forward transconductancea V(BR)DSS VGS(th) IGSS I...