Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2303 P-Channel 30-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S3
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t≤5s) Junction Temperature Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
-30 ±20 -1.9 -0.83 0.35 357 150 -50 ~+150
Unit V
A W ℃/W ℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol Test Condition
Min Typ Max Units
Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb Input Capacitance Outp.