CJ2101

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V(D-S) MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life SOT-323 1. GATE 2. SOURCE 1 3. DRAIN 2 APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 3 MARKING: TS1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10µs) Continuous Source-Drain Diode Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM IS PD RθJA TJ Tstg Value -8.0 ±8.0 -1.4 -3.0 -0.46 0.29 430 150 -50 ~+150 Unit V A W ℃/W ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition OFF CHARACTERISSTICS Drain-Source Breakdown Voltage Gate-Source Leakage Zero G...