MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2305 P-Channel 8-V(D-S) MOSFET
...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2305 P-Channel 8-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S5
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t≤10s) Junction Temperature Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
-8 ±8 -4.1 -0.8 0.35 357 150 -50 ~+150
Unit V
A W ℃/W ℃
B,May,2011
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current
Drain-source on-state resistancea
Forward transconductancea Dynamic Input capacitanceb,c Output capacitanceb,c Reverse transfer capacitan...
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