CJ2333

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2333 P-Channel MOSFET SOT-23 DESCRIPTION The CJ2333 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.This device is suitable for use in PWM,load switching and general purpose applications. 1. GATE 2. SOURCE 3. DRAIN FEATURE  TrenchFET Power MOSFET APPLICATION  DC/DC Converter  Load Switch for Portable Devices  Battery Switch MARKING: S33 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t=300µs) Power Dissipation Thermal Resistance from Junction to Ambient VDS VGS ID IDM PD RθJA -12 ±8 -6 a -20 0.35 b 1.1a 357 b 113 a Junction Temperature Storage Temperature TJ TSTG 150 -55~ +150 a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side. b. Device mounted on no heat sink. Unit V V...