CJ3134KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3134KDW Dual N-Channel MOSFET FEATURE  Lead Free Product is Acquired  Surface Mount Package  N-Channel Switch with Low RDS(on)  Operated at Low Logic Level Gate Drive  Equivalent to Two CJ3134K APPLICATION  Load/Power Switching  Interfacing Switching  Battery Management for Ultra Small Portable Electronics  Logic Level Shift MARKING: 34K SOT-363 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (t ≤10s) ID Power dissipation* PD Thermal resistance from junction to ambient RθJA Junction temperature TJ Storage temperature Tstg * Repetitive rating : Pulse width limited by junction temperature. Value 20 ±12 0.75 0.15 833 150 -55~ +150 Unit V V A W ℃/W ℃ ℃ C,Sep,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Parameter Symbol ...