CJ3134KW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3134KW N-Channel Power MOSFET GENERRAL DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). SOT-323 FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 34K Maximum ratings (Ta=25℃ unless otherwise noted) 1. GATE 2. SOURCE 3. DRAIN Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature Symbol VDSS VGS ID IDM PD RθJA Tj Tstg Value 20 ±12 0.75 3 200 625 150 -55 ~+150 Unit V A mW ℃/W ℃ A ,Nov,2013 Electrical characteristics (Ta=25℃ unle...